Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy
| Author(s) | T. Yamashita, H. Matsuhata, T. Sekiguchi, K. Momose, H. Osawa, M. Kitabatake. |
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| Journal title | Journal of Crystal Growth 416 142-147 ISSN: 00220248 ESI category: CHEMISTRY |
| Publisher | Elsevier BV |
| Year of publication | 2015 |
| Language | English |
| DOI | https://doi.org/10.1016/j.jcrysgro.2015.01.034 |
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