HOME > Article > DetailCharacterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopyT. Yamashita, H. Matsuhata, T. Sekiguchi, K. Momose, H. Osawa, M. Kitabatake. Journal of Crystal Growth 416 142-147. 2015.https://doi.org/10.1016/j.jcrysgro.2015.01.034 NIMS author(s)Fulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-07-04 22:30:03 +0900Updated at: 2024-04-01 21:45:33 +0900
