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Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy

Author(s)T. Yamashita, H. Matsuhata, T. Sekiguchi, K. Momose, H. Osawa, M. Kitabatake.
Journal titleJournal of Crystal Growth 416 142-147
ISSN: 00220248
ESI category: CHEMISTRY
PublisherElsevier BV
Year of publication2015
LanguageEnglish
DOIhttps://doi.org/10.1016/j.jcrysgro.2015.01.034
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