HOME > 論文 > 書誌詳細Characterization of Ion-Implanted Gallium Diffusion in SiliconYoshiyuki Sato, Isao Sakaguchi, Hajime Haneda. Japanese Journal of Applied Physics 43 [12] 8024-8025. 2004.https://doi.org/10.1143/jjap.43.8024 NIMS著者坂口 勲羽田 肇Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 14:40:32 +0900更新時刻: 2024-04-01 23:25:17 +0900
