HOME > 論文 > 書誌詳細Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3Xinyi Xia, Jian-Sian Li, Zhuoqun Wen, Kamruzzaman Khan, Md Irfan Khan, Elaheh Ahmadi, Yuichi Oshima, David C. Hays, Fan Ren, S. J. Pearton. Journal of Vacuum Science & Technology A 41 [2] 023205. 2023.https://doi.org/10.1116/6.0002453 NIMS著者大島 祐一Materials Data Repository (MDR)上の本文・データセット作成時刻: 2023-03-10 03:39:23 +0900更新時刻: 2025-01-09 08:53:22 +0900
