HOME > Article > DetailType-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3Xinyi Xia, Jian-Sian Li, Zhuoqun Wen, Kamruzzaman Khan, Md Irfan Khan, Elaheh Ahmadi, Yuichi Oshima, David C. Hays, Fan Ren, S. J. Pearton. Journal of Vacuum Science & Technology A 41 [2] 023205. 2023.https://doi.org/10.1116/6.0002453 NIMS author(s)OSHIMA, YuichiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2023-03-10 03:39:23 +0900Updated at: 2024-12-08 08:23:02 +0900
