Structure of β-AgGaO 2 ; ternary I–III–VI 2 oxide semiconductor with a wurtzite-derived structure | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Structure of β-AgGaO 2 ; ternary I–III–VI 2 oxide semiconductor with a wurtzite-derived structure
(Structure of β-AgGaO2; ternary I–III–VI2 oxide semiconductor with a wurtzite-derived structure)

Hiraku Nagatani, Issei Suzuki, Masao Kita, Masahiko Tanaka, Yoshio Katsuya, Osami Sakata, Takahisa Omata.

Journal of Solid State Chemistry 222 66-70. 2015.

https://doi.org/10.1016/j.jssc.2014.11.012

NIMS著者

田中雅彦

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-07-15 08:54:48 +0900更新時刻: 2024-04-01 17:37:32 +0900

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