HOME > Article > DetailStructure of β-AgGaO 2 ; ternary I–III–VI 2 oxide semiconductor with a wurtzite-derived structure(Structure of β-AgGaO2; ternary I–III–VI2 oxide semiconductor with a wurtzite-derived structure)Hiraku Nagatani, Issei Suzuki, Masao Kita, Masahiko Tanaka, Yoshio Katsuya, Osami Sakata, Takahisa Omata. Journal of Solid State Chemistry 222 66-70. 2015.https://doi.org/10.1016/j.jssc.2014.11.012 NIMS author(s)TANAKA, MasahikoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-07-15 08:54:48 +0900Updated at: 2024-04-01 17:37:32 +0900