Reduced defect densities in cubic GaN epilayers with AlGaN/GaN superlattice underlayers grown on (001) GaAs substrates by metalo

Mutsumi Sugiyama; Taiki Nosaka; Tomonori Suzuki; Takashi Koida; Kiyomi Nakajima; Toyomi Aoyama; Masatomo Sumiya; Toyohiro Chikyow; Akira Uedono; Shigefusa F. Chichibu; Mutsumi Sugiyama; Taiki Nosaka; Tomonori Suzuki; Takashi Koida; Kiyomi Nakajima; Toyomi Aoyama; Masatomo Sumiya; Toyohiro Chikyow; Akira Uedono; Shigefusa F. Chichibu

doi:10.1143/jjap.43.958

Reduced defect densities in cubic GaN epilayers with AlGaN/GaN superlattice underlayers grown on (001) GaAs substrates by metalo

Mutsumi Sugiyama, Taiki Nosaka, Tomonori Suzuki, Takashi Koida, Kiyomi Nakajima, Toyomi Aoyama, Masatomo Sumiya, Toyohiro Chikyow, Akira Uedono, Shigefusa F. Chichibu.

Japanese Journal of Applied Physics 43 [3] 958-965. 2004.

https://doi.org/10.1143/jjap.43.958

NIMS author(s)

CHIKYO, Toyohiro

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 14:41:02 +0900 Updated at: 2026-11-04 05:49:42 +0900