Signatures of Single Exciton Trapping in an Electrostatically Defined 2D Semiconductor Quantum Dot

Daniel N. Shanks; Fateme Mahdikhanysarvejahany; Michael R. Koehler; David G. Mandrus; Takashi Taniguchi; Kenji Watanabe; Brian J. LeRoy; John R. Schaibley

doi:10.1103/physrevb.106.l201401

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Single-exciton trapping in an electrostatically defined two-dimensional semiconductor quantum dot
(Signatures of Single Exciton Trapping in an Electrostatically Defined 2D Semiconductor Quantum Dot)

Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, John R. Schaibley.

Physical Review B 106 [20] L201401. 2022.

https://doi.org/10.1103/physrevb.106.l201401

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2022-11-23 03:25:04 +0900更新時刻: 2024-03-31 17:03:58 +0900

Single-exciton trapping in an electrostatically defined two-dimensional semiconductor quantum dot(Signatures of Single Exciton Trapping in an Electrostatically Defined 2D Semiconductor Quantum Dot)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Single-exciton trapping in an electrostatically defined two-dimensional semiconductor quantum dot
(Signatures of Single Exciton Trapping in an Electrostatically Defined 2D Semiconductor Quantum Dot)