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Irradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombereded Silicon
(17MeVプロトン照射したSiにおける残留欠陥の照射温度依存性)

AMEKURA, Hiroshi, 岸本直樹, KONO, Kenichiro, 斎藤鉄哉.
Materials Science Forum 1159-1164. 1995.

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    Created at: 2022-11-15 00:39:05 +0900 Updated at: 2022-11-15 00:39:05 +0900

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