HOME > 論文 > 書誌詳細High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium ElectrodesYu-Ting Huang, Yi-Hsun Chen, Yi-Ju Ho, Shih-Wei Huang, Yih-Ren Chang, Kenji Watanabe, Takashi Taniguchi, Hsiang-Chih Chiu, Chi-Te Liang, Raman Sankar, Fang-Cheng Chou, Chun-Wei Chen, Wei-Hua Wang. ACS Applied Materials & Interfaces 10 [39] 33450-33456. 2018.https://doi.org/10.1021/acsami.8b10576 NIMS著者渡邊 賢司谷口 尚Materials Data Repository (MDR)上の本文・データセット作成時刻 :2019-03-04 09:35:47 +0900 更新時刻 :2021-12-24 01:00:46 +0900