HOME > 論文 > 書誌詳細Characterization of HfSiON gate dielectrics using monoenergetic positron beamsA. Uedono, K. Ikeuchi, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, N. Umezawa, A. Hamid, T. Chikyow, T. Ohdaira M. Muramatsu, R. Suzuki, S. Inumiya, S. Kamiyama, Y. Akasaka, Y. Nara, K. Yamada. Journal of Applied Physics 99 [5] 054507. 2006.https://doi.org/10.1063/1.2178657 NIMS著者知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 14:59:08 +0900更新時刻: 2024-04-01 20:58:23 +0900