HOME > 論文 > 書誌詳細Raman shift and electrical properties of MoS2bilayer on boron nitride substrate(Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate)Lijun Li, Inyeal Lee, Dongsuk Lim, Moonshik Kang, Gil-Ho Kim, Nobuyuki Aoki, Yuichi Ochiai, Kenji Watanabe, Takashi Taniguchi. Nanotechnology 26 [29] 295702. 2015.https://doi.org/10.1088/0957-4484/26/29/295702 NIMS著者渡邊 賢司谷口 尚Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 17:51:11 +0900更新時刻: 2024-04-01 19:18:29 +0900