Electron Excitation Memory Induced by Light Irradiation of Hydrogenated Si Nanocrystals Embedded in SiO<sub>2</sub> | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Electron Excitation Memory Induced by Light Irradiation of Hydrogenated Si Nanocrystals Embedded in SiO₂
(SiO2中に埋め込まれた水素化Siナノ結晶の光誘起電子励起メモリー効果)

Kouichi Murakami, Ayako Nagahashi, Noriyuki Uchida, Naoki Fukata.

Japanese Journal of Applied Physics 52 [11R] 115201. 2013.

https://doi.org/10.7567/jjap.52.115201

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作成時刻: 2016-05-24 17:26:11 +0900 更新時刻: 2026-10-08 04:43:07 +0900

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