オペランド硬X線光電子分光法によるSiO2/4H-SiC界面の界面準位のエネルギー分布観測
(Direct Observation of the Energy Distribution of Interface States at SiO2/4H-SiC Interface: Operando Hard X-ray Photoelectron Spectroscopic Study)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-07-21 22:57:03 +0900Updated at: 2024-03-30 00:00:03 +0900