HOME > 論文 > 書誌詳細Improvement of the electrical properties of compensated phosphorus-doped diamond by high temperature annealingJ. Chevallier, C. Saguy, M. Barbé, F. Jomard, D. Ballutaud, T. Kociniewski, B. Philosoph, B. Fizgeer, S. Koizumi. physica status solidi (a) 202 [11] 2141-2147. 2005.https://doi.org/10.1002/pssa.200561926 NIMS著者小泉 聡Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 14:53:53 +0900更新時刻: 2024-04-01 20:05:34 +0900
