Improvement of the electrical properties of compensated phosphorus-doped diamond by high temperature annealing

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J. Chevallier, C. Saguy, M. Barbé, F. Jomard, D. Ballutaud, T. Kociniewski, B. Philosoph, B. Fizgeer, S. Koizumi.

physica status solidi (a) 202 [11] 2141-2147. 2005.

Created at: 2016-05-24 14:53:53 +0900Updated at: 2024-05-02 06:51:32 +0900