HOME > 論文 > 書誌詳細Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistorRyota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, Taketomo Sato, Tamotsu Hashizume. AIP Advances 10 [6] 065215. 2020.https://doi.org/10.1063/5.0012687 Open Access AIP Publishing (Publisher) NIMS著者生田目 俊秀Materials Data Repository (MDR)上の本文・データセット作成時刻: 2020-06-12 03:00:22 +0900更新時刻: 2024-03-31 01:41:52 +0900
