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Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor

Ryota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, Taketomo Sato, Tamotsu Hashizume.
AIP Advances 10 [6] 065215. 2020.
https://doi.org/10.1063/5.0012687
Open Access AIP Publishing (Publisher)

NIMS author(s)

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    Created at: 2020-06-12 03:00:22 +0900Updated at: 2024-03-31 01:41:52 +0900

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