Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene

Alexander Rothstein; Ammon Fischer; Anthony Achtermann; Eike Icking; Katrin Hecker; Luca Banszerus; Martin Otto; Stefan Trellenkamp; Florian Lentz; Kenji Watanabe; Takashi Taniguchi; Bernd Beschoten; Robin J. Dolleman; Dante M. Kennes; Christoph Stampfer; Alexander Rothstein; Ammon Fischer; Anthony Achtermann; Eike Icking; Katrin Hecker; Luca Banszerus; Martin Otto; Stefan Trellenkamp; Florian Lentz; Kenji Watanabe; Takashi Taniguchi; Bernd Beschoten; Robin J. Dolleman; Dante M. Kennes; Christoph Stampfer

doi:10.1021/acs.nanolett.4c06492

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Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene

Alexander Rothstein, Ammon Fischer, Anthony Achtermann, Eike Icking, Katrin Hecker, Luca Banszerus, Martin Otto, Stefan Trellenkamp, Florian Lentz, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Robin J. Dolleman, Dante M. Kennes, Christoph Stampfer.

Nano Letters 25 [16] 6429-6437. 2025.

https://doi.org/10.1021/acs.nanolett.4c06492

Open Access American Chemical Society (ACS) (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene

作成時刻: 2025-05-08 03:07:04 +0900 更新時刻: 2026-07-22 04:32:24 +0900