HOME > 論文 > 書誌詳細Influence of substrate nitridation on GaN and InN growth by plasma-assisted molecular-beam epitaxy(MBE法によるGaN、InN成長における基板窒化の影響)Yongzhao YAO, Takashi SEKIGUCHI, Takeshi OHGAKI, Yutaka ADACHI, Naoki OHASHI. Journal of the Ceramic Society of Japan 120 [1407] 513-519. 2012.https://doi.org/10.2109/jcersj2.120.513 NIMS著者大垣 武安達 裕大橋 直樹Materials Data Repository (MDR)上の本文・データセット作成時刻 :2016-05-24 16:50:37 +0900 更新時刻 :2022-09-05 13:32:15 +0900