Influence of substrate nitridation on GaN and InN growth by plasma-assisted molecular-beam epitaxy
(MBE法によるGaN、InN成長における基板窒化の影響)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-05-24 16:50:37 +0900Updated at: 2024-04-02 03:20:55 +0900