High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design

Kosuke Matsuzaki; Kou Harada; Yu Kumagai; Shogo Koshiya; Koji Kimoto; Shigenori Ueda; Masato Sasase; Akihiro Maeda; Tomofumi Susaki; Masaaki Kitano; Fumiyasu Oba; Hideo Hosono

doi:10.1002/adma.201801968

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High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design

Kosuke Matsuzaki, Kou Harada, Yu Kumagai, Shogo Koshiya, Koji Kimoto, Shigenori Ueda, Masato Sasase, Akihiro Maeda, Tomofumi Susaki, Masaaki Kitano, Fumiyasu Oba, Hideo Hosono.

Advanced Materials 30 [31] 1801968. 2018.

https://doi.org/10.1002/adma.201801968

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作成時刻: 2018-08-24 15:05:39 +0900更新時刻: 2024-03-30 00:11:03 +0900