High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design

Kosuke Matsuzaki; Kou Harada; Yu Kumagai; Shogo Koshiya; Koji Kimoto; Shigenori Ueda; Masato Sasase; Akihiro Maeda; Tomofumi Susaki; Masaaki Kitano; Fumiyasu Oba; Hideo Hosono; Kosuke Matsuzaki; Kou Harada; Yu Kumagai; Shogo Koshiya; Koji Kimoto; Shigenori Ueda; Masato Sasase; Akihiro Maeda; Tomofumi Susaki; Masaaki Kitano; Fumiyasu Oba; Hideo Hosono

doi:10.1002/adma.201801968

High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design

Kosuke Matsuzaki, Kou Harada, Yu Kumagai, Shogo Koshiya, Koji Kimoto, Shigenori Ueda, Masato Sasase, Akihiro Maeda, Tomofumi Susaki, Masaaki Kitano, Fumiyasu Oba, Hideo Hosono.

Advanced Materials 30 [31] 1801968. 2018.

https://doi.org/10.1002/adma.201801968

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2018-08-24 15:05:39 +0900Updated at: 2025-01-08 05:25:50 +0900