Highly stable, dual-gated MoS2 transistors encapsulated by hexagonal boron nitride with gate-controllable contact resistance and threshhold votage

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Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
(Highly stable, dual-gated MoS2 transistors encapsulated by hexagonal boron nitride with gate-controllable contact resistance and threshhold votage)

Gwan-Hyoung Lee, Xu Cui, Young Duck Kim, Ghidewon Arefe, Xian Zhang, Chul-Ho Lee, Fan Ye, Kenji Watanabe, Takashi Taniguchi, Philip Kim, James Hone.

ACS Nano 9 [7] 7019-7026. 2015.

作成時刻: 2016-05-24 17:52:56 +0900更新時刻: 2024-04-01 19:23:42 +0900