Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
(Highly stable, dual-gated MoS2 transistors encapsulated by hexagonal boron nitride with gate-controllable contact resistance and threshhold votage)

著者	Gwan-Hyoung Lee, Xu Cui, Young Duck Kim, Ghidewon Arefe, Xian Zhang, Chul-Ho Lee, Fan Ye, Kenji Watanabe, Takashi Taniguchi, Philip Kim, James Hone.
掲載誌名	ACS Nano 9 [7] 7019-7026 ISSN: 1936086X, 19360851 ESIでのカテゴリ: MATERIALS SCIENCE
出版社	American Chemical Society (ACS)
発表年	2015
言語	English
DOI	https://doi.org/10.1021/acsnano.5b01341
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Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage(Highly stable, dual-gated MoS2 transistors encapsulated by hexagonal boron nitride with gate-controllable contact resistance and threshhold votage)