Direct evidence for charge compensation induced large magnetoresistance in thin WTe2

Yaojia Wang; Lizheng Wang; Xiaowei Liu; Heng Wu; Pengfei Wang; Dayu Yan; Bin Cheng; Youguo Shi; Kenji Watanabe; Takashi Taniguchi; Shi-Jun Liang; Feng Miao

doi:10.1021/acs.nanolett.9b01275

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Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe2
(Direct evidence for charge compensation induced large magnetoresistance in thin WTe2)

Yaojia Wang, Lizheng Wang, Xiaowei Liu, Heng Wu, Pengfei Wang, Dayu Yan, Bin Cheng, Youguo Shi, Kenji Watanabe, Takashi Taniguchi, Shi-Jun Liang, Feng Miao.

Nano Letters 19 [6] 3969-3975. 2019.

https://doi.org/10.1021/acs.nanolett.9b01275

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2019-06-18 03:00:20 +0900更新時刻: 2024-03-30 23:55:43 +0900

Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe2(Direct evidence for charge compensation induced large magnetoresistance in thin WTe2)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe2
(Direct evidence for charge compensation induced large magnetoresistance in thin WTe2)