Berry Curvature Induced Valley Hall Effect in Non‐Encapsulated hBN/Bilayer Graphene Heterostructure Aligned with Near‐Zero Twist Angle | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Berry Curvature Induced Valley Hall Effect in Non‐Encapsulated hBN/Bilayer Graphene Heterostructure Aligned with Near‐Zero Twist Angle
(Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle)

Teppei Shintaku, Afsal Kareekunnan, Masashi Akabori, Kenji Watanabe, Takashi Taniguchi, Hiroshi Mizuta.

Advanced Physics Research 3 [1] 2300064. 2024.

https://doi.org/10.1002/apxr.202300064

Open Access Wiley (Publisher) Materials Data Repository (MDR)

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MDRavailable Berry Curvature Induced Valley Hall Effect in Non‐Encapsulated hBN/Bilayer Graphene Heterostructure Aligned with Near‐Zero Twist Angle

作成時刻: 2024-02-14 03:12:35 +0900 更新時刻: 2026-08-28 09:42:31 +0900

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