Doping-Free High-Performance Photovoltaic Effect in a WSe<sub>2</sub> Lateral <i>p-n</i> Homojunction Formed by Contact Engineering

Hai Yen Le Thi; Tien Dat Ngo; Nhat Anh Nguyen Phan; Hoseong Shin; Inayat Uddin; A. Venkatesan; Chi-Te Liang; Nobuyuki Aoki; Won Jong Yoo; Kenji Watanabe; Takashi Taniguchi; Gil-Ho Kim; Hai Yen Le Thi; Tien Dat Ngo; Nhat Anh Nguyen Phan; Hoseong Shin; Inayat Uddin; A. Venkatesan; Chi-Te Liang; Nobuyuki Aoki; Won Jong Yoo; Kenji Watanabe; Takashi Taniguchi; Gil-Ho Kim

doi:10.1021/acsami.3c05451

Doping-Free High-Performance Photovoltaic Effect in a WSe₂ Lateral p-n Homojunction Formed by Contact Engineering

Hai Yen Le Thi, Tien Dat Ngo, Nhat Anh Nguyen Phan, Hoseong Shin, Inayat Uddin, A. Venkatesan, Chi-Te Liang, Nobuyuki Aoki, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim.

ACS Applied Materials & Interfaces 15 [29] 35342-35349. 2023.

https://doi.org/10.1021/acsami.3c05451

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2023-08-01 03:26:52 +0900 Updated at: 2026-10-08 08:47:35 +0900

Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Doping-Free High-Performance Photovoltaic Effect in a WSe₂ Lateral p-n Homojunction Formed by Contact Engineering