Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe2 in WSe2/h-BN/p+-MoS2 Junction
(Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe2 in WSe2/h-BN/p+-MoS2 Junction)

著者	Kei Takeyama, Rai Moriya, Shota Okazaki, Yijin Zhang, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Takao Sasagawa, Tomoki Machida.
掲載誌名	Nano Letters 21 [9] 3929-3934 ISSN: 15306984 ESIでのカテゴリ: PHYSICS
出版社	American Chemical Society (ACS)
発表年	2021
言語	English
DOI	https://doi.org/10.1021/acs.nanolett.1c00555
この文献をMendeleyにインポート

Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe2 in WSe2/h-BN/p+-MoS2 Junction(Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe2 in WSe2/h-BN/p+-MoS2 Junction)