HOME > Article > DetailEffects of nitrogen atom doping on dielectric constants of Hf-based gate oxidesHiroyoshi Momida, Tomoyuki Hamada, Takenori Yamamoto, Tsuyoshi Uda, Naoto Umezawa, Toyohiro Chikyow, Kenji Shiraishi, Takahisa Ohno. Applied Physics Letters 88 [11] 112903. 2006.https://doi.org/10.1063/1.2184991 NIMS author(s)CHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 14:57:42 +0900 Updated at: 2026-10-01 05:41:15 +0900
