HOME > 論文 > 書誌詳細Effects of nitrogen atom doping on dielectric constants of Hf-based gate oxidesHiroyoshi Momida, Tomoyuki Hamada, Takenori Yamamoto, Tsuyoshi Uda, Naoto Umezawa, Toyohiro Chikyow, Kenji Shiraishi, Takahisa Ohno. Applied Physics Letters 88 [11] 112903. 2006.https://doi.org/10.1063/1.2184991 NIMS著者知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 14:57:42 +0900更新時刻: 2024-04-01 20:57:43 +0900