Gate-Tunable Magnetoresistance in Antiferromagnetic van der Waals FePS
                    <sub>3</sub>
                    Transistors

Thomas W. Song; M. S. Nicholas Tey; Junjie Wang; Ethan S. Garvey; Margaret R. Quinn; Danilo Puggioni; Dmitry Lebedev; Rui Gusmão; Zdeněk Sofer; Kenji Watanabe; Takashi Taniguchi; James M. Rondinelli; Nathaniel P. Stern; Vinod K. Sangwan; Mark C. Hersam; Thomas W. Song; M. S. Nicholas Tey; Junjie Wang; Ethan S. Garvey; Margaret R. Quinn; Danilo Puggioni; Dmitry Lebedev; Rui Gusmão; Zdeněk Sofer; Kenji Watanabe; Takashi Taniguchi; James M. Rondinelli; Nathaniel P. Stern; Vinod K. Sangwan; Mark C. Hersam

doi:10.1021/acs.nanolett.6c01267

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Gate-Tunable Magnetoresistance in Antiferromagnetic van der Waals FePS ₃ Transistors

Thomas W. Song, M. S. Nicholas Tey, Junjie Wang, Ethan S. Garvey, Margaret R. Quinn, Danilo Puggioni, Dmitry Lebedev, Rui Gusmão, Zdeněk Sofer, Kenji Watanabe, Takashi Taniguchi, James M. Rondinelli, Nathaniel P. Stern, Vinod K. Sangwan, Mark C. Hersam.

Nano Letters 26 [28] 9042-9050. 2026.

https://doi.org/10.1021/acs.nanolett.6c01267

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2026-07-28 03:06:14 +0900 更新時刻: 2026-08-29 06:06:15 +0900

Gate-Tunable Magnetoresistance in Antiferromagnetic van der Waals FePS 3 Transistors

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Gate-Tunable Magnetoresistance in Antiferromagnetic van der Waals FePS ₃ Transistors