Tuning weak localization in single-layer disordered SnSe<sub>2</sub>/graphene/h-BN field-effect device

Wei-Chen Chen; Chiashain Chuang; Tian-Hsin Wang; Ching-Chen Yeh; Sheng-Zong Chen; Kohei Sakanashi; Michio Kida; Li-Hung Lin; Po-Han Lee; Po-Chen Wu; Sheng-Wen Wang; Kenji Watanabe; Takashi Taniguchi; Ya-Ping Hsieh; Nobuyuki Aoki; Chi-Te Liang; Wei-Chen Chen; Chiashain Chuang; Tian-Hsin Wang; Ching-Chen Yeh; Sheng-Zong Chen; Kohei Sakanashi; Michio Kida; Li-Hung Lin; Po-Han Lee; Po-Chen Wu; Sheng-Wen Wang; Kenji Watanabe; Takashi Taniguchi; Ya-Ping Hsieh; Nobuyuki Aoki; Chi-Te Liang

doi:10.1088/2053-1583/ac70e1

Tuning weak localization in single-layer disordered SnSe2/graphene/h-BN field-effect device

Wei-Chen Chen, Chiashain Chuang, Tian-Hsin Wang, Ching-Chen Yeh, Sheng-Zong Chen, Kohei Sakanashi, Michio Kida, Li-Hung Lin, Po-Han Lee, Po-Chen Wu, Sheng-Wen Wang, Kenji Watanabe, Takashi Taniguchi, Ya-Ping Hsieh, Nobuyuki Aoki, Chi-Te Liang.

2D Materials 9 [4] 045015. 2022.

https://doi.org/10.1088/2053-1583/ac70e1

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2022-09-09 03:18:18 +0900Updated at: 2024-04-02 05:24:18 +0900