HOME > 論文 > 書誌詳細Near-surface defects in boron doped diamond Schottky diodes studied from capacitance transientsPierre MURET, Julien PERNOT, TERAJI, Tokuyuki, Toshimichi ITO. APPLIED PHYSICS EXPRESS 1 [3] 035003-1-035003-3. 2008.NIMS著者寺地 徳之Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 15:26:40 +0900更新時刻: 2018-12-14 23:49:55 +0900
