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Near-surface defects in boron doped diamond Schottky diodes studied from capacitance transients

Pierre MURET, Julien PERNOT, TERAJI, Tokuyuki, Toshimichi ITO.
APPLIED PHYSICS EXPRESS 1 [3] 035003-1-035003-3. 2008.

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    Created at: 2016-05-24 15:26:40 +0900Updated at: 2018-12-14 23:49:55 +0900

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