Reconfigurable 2D Floating-Gate Field-Effect Transistors with Graphene-Induced Interfacial Polarization for Unified Memory-Logic Integration

June-Chul Shin; Taegyun Park; Dong Hoon Shin; Hyun-Young Choi; Kyungmin Yang; Jiwoo Kim; Oh Yeong Gong; Hee Jae Hwang; Kenji Watanabe; Takashi Taniguchi; Yeonwoong Jung; Cheol Seong Hwang; Gwan-Hyoung Lee; June-Chul Shin; Taegyun Park; Dong Hoon Shin; Hyun-Young Choi; Kyungmin Yang; Jiwoo Kim; Oh Yeong Gong; Hee Jae Hwang; Kenji Watanabe; Takashi Taniguchi; Yeonwoong Jung; Cheol Seong Hwang; Gwan-Hyoung Lee

doi:10.1021/acsnano.6c05072

Reconfigurable 2D Floating-Gate Field-Effect Transistors with Graphene-Induced Interfacial Polarization for Unified Memory-Logic Integration

June-Chul Shin, Taegyun Park, Dong Hoon Shin, Hyun-Young Choi, Kyungmin Yang, Jiwoo Kim, Oh Yeong Gong, Hee Jae Hwang, Kenji Watanabe, Takashi Taniguchi, Yeonwoong Jung, Cheol Seong Hwang, Gwan-Hyoung Lee.

ACS Nano 20 [27] 19439-19448. 2026.

https://doi.org/10.1021/acsnano.6c05072

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2026-07-23 03:07:34 +0900 Updated at: 2026-10-27 04:36:44 +0900