Formation and migration energies of a vacancy and an interstitial in a high-purity Si crystal determined by detecting complexes of point defects and hydrogen: Evaluation of activation energies of self-diffusion
(水素-点欠陥複合体を利用した高純度Si結晶中の空孔の形成、移動エネルギー)
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2016-05-24 17:34:30 +0900更新時刻: 2024-04-02 03:31:37 +0900