Formation and migration energies of a vacancy and an interstitial in a high-purity Si crystal determined by detecting complexes of point defects and hydrogen: Evaluation of activation energies of self-diffusion
(水素-点欠陥複合体を利用した高純度Si結晶中の空孔の形成、移動エネルギー)
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Created at: 2016-05-24 17:34:30 +0900Updated at: 2024-04-02 03:31:37 +0900