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著者名Wipakorn Jevasuwan, Yuji Urabe, Tatsuro Maeda, Noriyuki Miyata, Tetsuji Yasuda, Akihiro Ohtake, Hisashi Yamada, Masahiko Hata, Sunghoon Lee, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi.
タイトルControlling Anion Composition at Metal–Insulator–Semiconductor Interfaces on III–V Channels by Plasma Processing
掲載誌名Japanese Journal of Applied Physics 51 [6R] 065701
ISSN: 00214922 13474065
発表年2012
言語English
ESIでのカテゴリPHYSICS
DOIhttps://doi.org/10.1143/jjap.51.065701
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