Gated
                    <i>PN</i>
                    Junction in Ambipolar MoS
                    <sub>2</sub>
                    for Superior Self‐Powered Photodetection

Jaeha Hwang; Jungi Song; Hanbyeol Jang; Yongwook Seok; Jiwi Park; Suyeon Lee; Jun‐Hyeok Choi; Gyeongsu Lee; Kenji Watanabe; Takashi Taniguchi; Byoung Hun Lee; Kyoungsik Yu; Kayoung Lee; Jaeha Hwang; Jungi Song; Hanbyeol Jang; Yongwook Seok; Jiwi Park; Suyeon Lee; Jun‐Hyeok Choi; Gyeongsu Lee; Kenji Watanabe; Takashi Taniguchi; Byoung Hun Lee; Kyoungsik Yu; Kayoung Lee

doi:10.1002/adfm.202510113

Gated PN Junction in Ambipolar MoS ₂ for Superior Self‐Powered Photodetection

Jaeha Hwang, Jungi Song, Hanbyeol Jang, Yongwook Seok, Jiwi Park, Suyeon Lee, Jun‐Hyeok Choi, Gyeongsu Lee, Kenji Watanabe, Takashi Taniguchi, Byoung Hun Lee, Kyoungsik Yu, Kayoung Lee.

Advanced Functional Materials 36 [3] e10113. 2026.

https://doi.org/10.1002/adfm.202510113

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2026-06-16 03:07:32 +0900 Updated at: 2026-09-19 04:39:42 +0900

Gated PN Junction in Ambipolar MoS 2 for Superior Self‐Powered Photodetection

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Gated PN Junction in Ambipolar MoS ₂ for Superior Self‐Powered Photodetection