Gated
                    <i>PN</i>
                    Junction in Ambipolar MoS
                    <sub>2</sub>
                    for Superior Self‐Powered Photodetection

Jaeha Hwang; Jungi Song; Hanbyeol Jang; Yongwook Seok; Jiwi Park; Suyeon Lee; Jun‐Hyeok Choi; Gyeongsu Lee; Kenji Watanabe; Takashi Taniguchi; Byoung Hun Lee; Kyoungsik Yu; Kayoung Lee; Jaeha Hwang; Jungi Song; Hanbyeol Jang; Yongwook Seok; Jiwi Park; Suyeon Lee; Jun‐Hyeok Choi; Gyeongsu Lee; Kenji Watanabe; Takashi Taniguchi; Byoung Hun Lee; Kyoungsik Yu; Kayoung Lee

doi:10.1002/adfm.202510113

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Gated PN Junction in Ambipolar MoS ₂ for Superior Self‐Powered Photodetection

Jaeha Hwang, Jungi Song, Hanbyeol Jang, Yongwook Seok, Jiwi Park, Suyeon Lee, Jun‐Hyeok Choi, Gyeongsu Lee, Kenji Watanabe, Takashi Taniguchi, Byoung Hun Lee, Kyoungsik Yu, Kayoung Lee.

Advanced Functional Materials 36 [3] e10113. 2026.

https://doi.org/10.1002/adfm.202510113

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2026-06-16 03:07:32 +0900 更新時刻: 2026-10-20 04:39:53 +0900

Gated PN Junction in Ambipolar MoS 2 for Superior Self‐Powered Photodetection

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Gated PN Junction in Ambipolar MoS ₂ for Superior Self‐Powered Photodetection