Nanometer-thin ALD-Al2O3for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Nanometer-thin ALD-Al2O3for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE
(Nanometer-thin ALD-Al2O3 for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE)

Ryan G. Banal, Masataka Imura, Daiju Tsuya, Hideo Iwai, Yasuo Koide.

physica status solidi (a) 214 [2] 1600727. 2017.

https://doi.org/10.1002/pssa.201600727

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作成時刻: 2017-06-27 22:18:01 +0900更新時刻: 2024-04-01 22:40:06 +0900

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