Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/fnoise involved in forward current | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/fnoise involved in forward current
(順方向電流の1/f雑音によるGaN:Eu赤色LEDの発光中心への注入電荷の捕獲分析)

Masashi Ishii, Atsushi Koizumi, Yasufumi Fujiwara.

Japanese Journal of Applied Physics 55 [1] 015801. 2016.

https://doi.org/10.7567/jjap.55.015801

NIMS著者

石井真史

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 17:59:38 +0900更新時刻: 2024-04-01 22:51:17 +0900

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