HOME > 論文 > 書誌詳細Electron-beam-induced current and cathodoluminescence study of dislocation arrays in 4H-SiC homoepitaxial layersBin Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura. Journal of Applied Physics 106 [7] 074502. 2009.https://doi.org/10.1063/1.3236579 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 15:53:38 +0900 更新時刻: 2026-10-30 08:53:24 +0900
