Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping

Mitsuhiro Okada; Naoka Nagamura; Tarojiro Matsumura; Yasunobu Ando; Anh Khoa Augustin Lu; Naoya Okada; Wen-Hsin Chang; Takeshi Nakanishi; Tetsuo Shimizu; Toshitaka Kubo; Toshifumi Irisawa; Takatoshi Yamada; Mitsuhiro Okada; Naoka Nagamura; Tarojiro Matsumura; Yasunobu Ando; Anh Khoa Augustin Lu; Naoya Okada; Wen-Hsin Chang; Takeshi Nakanishi; Tetsuo Shimizu; Toshitaka Kubo; Toshifumi Irisawa; Takatoshi Yamada

doi:10.1063/5.0070333

HOME > 論文 > 書誌詳細

Growth of MoS₂–Nb-doped MoS₂ lateral homojunctions: A monolayer p–n diode by substitutional doping

Mitsuhiro Okada, Naoka Nagamura, Tarojiro Matsumura, Yasunobu Ando, Anh Khoa Augustin Lu, Naoya Okada, Wen-Hsin Chang, Takeshi Nakanishi, Tetsuo Shimizu, Toshitaka Kubo, Toshifumi Irisawa, Takatoshi Yamada.

APL Materials 9 [12] 121115. 2021.

https://doi.org/10.1063/5.0070333

NIMS著者

永村直佳

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2022-01-19 03:00:39 +0900更新時刻: 2025-01-09 08:19:08 +0900