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Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping

著者Mitsuhiro Okada, Naoka Nagamura, Tarojiro Matsumura, Yasunobu Ando, Anh Khoa Augustin Lu, Naoya Okada, Wen-Hsin Chang, Takeshi Nakanishi, Tetsuo Shimizu, Toshitaka Kubo, Toshifumi Irisawa, Takatoshi Yamada.
掲載誌名APL Materials 9 [12] 121115
ISSN: 2166532X
ESIでのカテゴリ: MATERIALS SCIENCE
出版社AIP Publishing
発表年2021
言語English
DOIhttps://doi.org/10.1063/5.0070333
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