HOME > Article > DetailGrowth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional dopingMitsuhiro Okada, Naoka Nagamura, Tarojiro Matsumura, Yasunobu Ando, Anh Khoa Augustin Lu, Naoya Okada, Wen-Hsin Chang, Takeshi Nakanishi, Tetsuo Shimizu, Toshitaka Kubo, Toshifumi Irisawa, Takatoshi Yamada. APL Materials 9 [12] 121115. 2021.https://doi.org/10.1063/5.0070333 NIMS author(s)NAGAMURA, NaokaFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-01-19 03:00:39 +0900Updated at: 2025-01-09 08:19:08 +0900