Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping

Mitsuhiro Okada; Naoka Nagamura; Tarojiro Matsumura; Yasunobu Ando; Anh Khoa Augustin Lu; Naoya Okada; Wen-Hsin Chang; Takeshi Nakanishi; Tetsuo Shimizu; Toshitaka Kubo; Toshifumi Irisawa; Takatoshi Yamada; Mitsuhiro Okada; Naoka Nagamura; Tarojiro Matsumura; Yasunobu Ando; Anh Khoa Augustin Lu; Naoya Okada; Wen-Hsin Chang; Takeshi Nakanishi; Tetsuo Shimizu; Toshitaka Kubo; Toshifumi Irisawa; Takatoshi Yamada

doi:10.1063/5.0070333

Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping

Mitsuhiro Okada, Naoka Nagamura, Tarojiro Matsumura, Yasunobu Ando, Anh Khoa Augustin Lu, Naoya Okada, Wen-Hsin Chang, Takeshi Nakanishi, Tetsuo Shimizu, Toshitaka Kubo, Toshifumi Irisawa, Takatoshi Yamada.

APL Materials 9 [12] 121115. 2021.

https://doi.org/10.1063/5.0070333

NIMS author(s)

NAGAMURA, Naoka

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2022-01-19 03:00:39 +0900Updated at: 2024-03-31 16:15:49 +0900