Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3Insertion Layer

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Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al₂O₃Insertion Layer
(Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3Insertion Layer)

Moon Young Yang, Katsumasa Kamiya, Blanka Magyari-Köpe, Hiroyoshi Momida, Takahisa Ohno, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi.

作成時刻: 2016-05-24 17:12:40 +0900 更新時刻: 2026-11-09 06:30:48 +0900