Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al<sub>2</sub>O<sub>3</sub>Insertion Layer

Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3Insertion Layer
(Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3Insertion Layer)

Moon Young Yang, Katsumasa Kamiya, Blanka Magyari-Köpe, Hiroyoshi Momida, Takahisa Ohno, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi.

Created at: 2016-05-24 17:12:40 +0900Updated at: 2024-04-02 04:46:45 +0900