Enhancement of infrared photo-responses of the Schottky gate region of an n-AlGaAs/GaAs heterojunction FET by a second light illumination | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Enhancement of infrared photo-responses of the Schottky gate region of an n-AlGaAs/GaAs heterojunction FET by a second light illumination

Japanese Journal of Applied Physics 59 [12] 124003. 2020.

https://doi.org/10.35848/1347-4065/abc8a4

NIMS著者

川津琢也

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2020-12-15 03:00:18 +0900更新時刻: 2024-04-02 01:25:04 +0900

▲ページトップへ移動