HOME > Article > DetailEnhancement of infrared photo-responses of the Schottky gate region of an n-AlGaAs/GaAs heterojunction FET by a second light illuminationTakuya Kawazu. Japanese Journal of Applied Physics 59 [12] 124003. 2020.https://doi.org/10.35848/1347-4065/abc8a4 NIMS author(s)KAWAZU, TakuyaFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2020-12-15 03:00:18 +0900Updated at: 2024-04-02 01:25:04 +0900