HOME > 論文 > 書誌詳細Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamondKazuki Ito, Hiroshi Saito, Kento Sasaki, Hideyuki Watanabe, Tokuyuki Teraji, Kohei M. Itoh, Eisuke Abe. Applied Physics Letters 110 [21] 213105. 2017.https://doi.org/10.1063/1.4984060 NIMS著者寺地 徳之Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-05-30 23:07:18 +0900更新時刻: 2024-03-30 01:48:22 +0900
