HOME > Article > DetailNitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamondKazuki Ito, Hiroshi Saito, Kento Sasaki, Hideyuki Watanabe, Tokuyuki Teraji, Kohei M. Itoh, Eisuke Abe. Applied Physics Letters 110 [21] 213105. 2017.https://doi.org/10.1063/1.4984060 NIMS author(s)TERAJI, TokuyukiFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-05-30 23:07:18 +0900 Updated at :2022-10-22 02:48:45 +0900