Nonpolar a-plane GaN film on Si(100) produced using a specially designed lattice-matched buffer: A fresh approach to eliminate the polarization effect | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Nonpolar a-plane GaN film on Si(100) produced using a specially designed lattice-matched buffer: A fresh approach to eliminate the polarization effect

J. H. Song, Y. Z. Yoo, Kiyomi Nakajima, Toyohiro Chikyow, Takashi Sekiguchi, Hideomi Koinuma.

Journal of Applied Physics 97 [4] 043531. 2005.

https://doi.org/10.1063/1.1849830

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作成時刻: 2016-05-24 14:54:50 +0900 更新時刻: 2026-09-30 04:59:04 +0900

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